feb.1999 mitsubishi semiconductor high-speed switching thyristor array ? sa01, sa02, SA04, sa07 thyristor array sa series for strobe flasher sa01, sa02, SA04, sa07 application automatic strobe flasher symbol v drm ] 1 v dsm ] 1 v rrm C i fgm t opr t stg parameter repetitive peak off-state voltage non-repetitive peak off-state voltage repetitive peak reverse voltage pulse current ability peak gate forward current operating ambient temperature storage temperature unit v v v a a c c main 400 400 see electrical characteristics C20 ~ +60 C40 ~ +125 sa01 main aux sa02 SA04 sa07 aux 480 600 480 600 480 600 450 600 0.5 0.3 0.5 1.0 1.0 0.5 0.3 1.0 maximum ratings (t a = C20 ~ +60 c, unless otherwise noted) 1
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main thyristor: anode main thyristor: gate main and aux. thyristor: cathode aux. thyristor: gate aux. thyristor: anode outline drawing dimensions in mm 2 1 15 2 4 3=12 +0.5 0 8 max 10 max 3 min 1 0.5 3 1 0.5 1 4 max 345 5 24 3 sa series 1 family constitution application compact strobe middle class strobe built-in strobe commutating characteristics c m =700 m f, i tm =200a, c c =2.2 m f c m =1000 m f, i tm =230a, c c =2.5 m f c m =700 m f, i tm =200a, c c =1.4 m f guide no. (asa100) 25 32 25 type sa01 sa02 SA04 sa07 aux thyristor high sensitive i gt 250 m a high holding current i h 3 25ma high holding current i h 3 25ma high sensitive i gt 250 m a main aux main aux ] 1. connect 1k w resistor between gate to cathode.
feb.1999 mitsubishi semiconductor high-speed switching thyristor array ? sa01, sa02, SA04, sa07 thyristor array sa series for strobe flasher symbol i drm i rrm i gt v gt i h unit m a m a ma v ma ] 1. connect 1k w resistor between gate to cathode. ] 2. minimum value sa01 sa02 SA04 sa07 main 100 100 30 1.5 aux 20 20 0.25 1.0 1.0 parameter repetitive peak off-state current ] 1 repetitive peak reverse current gate trigger current gate trigger voltage holding current ] 2 electrical characteristics (t a =25 c, unless otherwise noted) main 100 100 30 1.5 aux 100 100 30 1.5 25 main 100 100 50 2.0 aux 100 100 30 1.5 25 main 100 100 80 1.5 aux 20 20 0.25 1.0 1.0 47n c c u trg 22k i1 i5 ig 1k l c m v cm + - 10k 10 470 470 sr1fm 10n 15 2 4 3 12345 2 15 4 2 3 0 ip u trg 0 0 0 ig i1 i5 ig tw t t t t saox sa120 aux thyristor main thyristor 47n fig. 1 test circuit fig. 3 pin position and equivalent circuit fig. 2 the voltage and current waveforms
feb.1999 mitsubishi semiconductor high-speed switching thyristor array ? sa01, sa02, SA04, sa07 thyristor array sa series for strobe flasher 10 1 10 3 7 5 3 2 ?0 0 20 10 2 7 5 3 2 40 60 80 4 4 10 30 50 70 ?0 main thyristor sa02,04 aux thyristor sa01,07 aux thyristor typical example 0.6 0.4 0.2 0 ?.2 ?.4 80 30 ?0 ?0 0 1020 40506070 0.5 0.3 0.1 ?.1 ?.3 typical example main thyristor aux thyristor gate trigger current vs. junction temperature junction temperature (?) 100 (%) gate trigger current ( t j = t c ) gate trigger current ( t j = 25 ? ) gate trigger voltage vs. junction temperature junction temperature (?) 100 (%) gate trigger voltage ( t j = t c ) gate trigger voltage ( t j = 25 ? ) commutation characteristics in strobe application sa series commutates at arbitrary conducting duration t w under following condition. (see fig. 1, 2) please confer following sheets in case that c m or i tm is different from mentioned value. (see shown under) commutating characteristics (t a =25 c, single pulse operation) sa01 sa02 SA04 350 1000 230 25 2.5 unit v m f a m h m f sa07 700 200 1.4 700 200 2.2 parameter main capacitor charging voltage main capacitor peak on-state current anode reactor commutating capacitor symbol v cm c m i tm l c c notice please consider counterplans against induced noise across common impedance. (between common cathode 3 and the ground point of t rigger cicuit for the auxiliary thyristor) performance curves
feb.1999 mitsubishi semiconductor high-speed switching thyristor array ? sa01, sa02, SA04, sa07 thyristor array sa series for strobe flasher 1000 800 600 400 200 0 220 120 140 160 180 200 c c = 0.8 f c c = 0.9 f c c = 1.0 f c c = 1.1 f c c = 1.2 f c c = 1.3 f c c = 1.4 f c c = 1.5 f 1000 800 600 400 200 0 220 120 140 160 180 200 c c = 1.8 f c c = 1.9 f c c = 2.0 f c c = 2.1 f c c = 2.2 f c c = 2.3 f c c = 1.7 f v cm = 350v t a = 25? l = 25? see fig.1 1.8 1.6 1.4 1.2 1.0 0.8 100 50 10 0 20 30 40 60 70 80 90 1.7 1.5 1.3 1.1 0.9 typical example 10 1 10 3 7 5 3 2 ?0 0 20 10 2 7 5 3 2 40 60 80 4 4 ?0 10 30 50 70 typical example sa01,07 aux thyristor sa02,04 aux thyristor 10 2 23 10 0 5710 1 23 5710 2 23 5710 3 10 4 7 5 3 2 10 3 7 5 3 2 7 5 3 2 10 1 typical example main thyristor sa01,07 aux thyristor sa02,04 aux thyristor 1400 1200 1000 800 600 400 260 160 180 200 220 240 c c = 2.4 f c c = 2.2 f c c = 2.0 f c c = 1.8 f c c = 2.6 f c c = 2.8 f v cm = 350v l = 25? t a = 25? see fig.1 holding current vs. junction temperature junction temperature (?) 100 (%) holding current ( t j = t c ) holding current ( t j = 25 ? ) gate trigger current vs. gate trigger pulse width gate trigger pulse width (?) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) commutating characteristics (sa01,sa02) main capacitor (?) peak on-state current (a) commutating characteristics (sa07) main capacitor (?) peak on-state current (a) commutating characteristics (SA04) main capacitor (?) peak on-state current (a) commutating capacitor vs. ambient temperature ambient temperature (?) 100 (%) commutating capacitor ( ta = t? ) commutating capacitor ( ta = 25? )
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